Galdins, A.: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

E Cassan, P Dollfus, S Galdin, P Hesto

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 141 KB

english, 2000

2

Thermal noise in nanometric DG-MOSFET

P. Dollfus, A. Bournel, S. Galdin-Retailleau, J. E. Velázquez

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 339 KB

english, 2006

3

Technique for Optimization Design of the Flow Path of a Main Oil Pump

Valyukhov, S. G., Kretinin, A. V., Galdin, D. N., Petrenko, V. R., Podval’nyi, E. S., Lapshina, K. N.

Journal:

Chemical and Petroleum Engineering

Year:

2018

Language:

english

File:

PDF, 503 KB

english, 2018

4

Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon

F. Carosella, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, P. Dollfus

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 197 KB

english, 2008

5

Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

P. Dollfus, S. Galdin, P. Hesto, H. J. Osten

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2001

Language:

english

File:

PDF, 301 KB

english, 2001

6

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M.,

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 746 KB

english, 1994

7

Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides

Cassan, E., Dollfus, P., Galdin, S., Hesto, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

8

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Fregonese, S., Cazin d'Honincthun, H., Goguet, J., Maneux, C., Zimmer, T., Bourgoin, J.-P., Dollfus, P., Galdin-Retailleau, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.05 MB

english, 2008

9

[IEEE Proceedings. 2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology - Tunis (2006.09.5-2006.09.7)] International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. - Analysis of CNTFET physical compact model

Maneux, C., Goguet, J., Fregonese, S., Zimmer, T., Cazin d'Honincthun, H., Galdin-Retailleau, S.

Year:

2006

Language:

english

File:

PDF, 444 KB

english, 2006

10

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - 3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices

Dollfus,, Velazquez,, Bourne,, Galdin-Retailleau,

Year:

2004

Language:

english

File:

PDF, 96 KB

english, 2004

11

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - From wave-functions to current-voltage characteristics in silicon single-nanocrystal Coulomb blockade devices

See,, Dollfus,, Galdin,, Hesto,

Year:

2004

Language:

english

File:

PDF, 117 KB

english, 2004

12

Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

Cassan, E., Galdin, S., Dollfus, P., Hesto, P.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 366 KB

english, 1999

13

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Spin-transfer torque magnetic memory as a stochastic memristive synapse

Vincent, A. F., Larroque, J., Zhao, W. S., Romdhane, N. Ben, Bichler, O., Gamrat, C., Klein, J.-O., Galdin-Retailleau, S., Querlioz, D.

Year:

2014

Language:

english

File:

PDF, 866 KB

english, 2014

14

Comparison of a density functional theory and a Hartree treatment of silicon quantum dot

Sée, Johann, Dollfus, Philippe, Galdin, Sylvie

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 595 KB

english, 2002

15

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Influence of ballistic effects in ultra-small MOSFETs

Saint Martin,, Aubry-Fortuna,, Bournel,, Dollfus,, Galdin,, Chassat,

Year:

2004

Language:

english

File:

PDF, 93 KB

english, 2004

16

Influence of base dopant out-diffusion into the emitter in SiSiGe heterojunction bipolar transistor using Monte Carlo simulations

Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice Hesto

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 316 KB

english, 1995

17

Transient analysis of CML inverter using Monte Carlo simulations

Sylvie Galdin, François-Xavier Musalem, Philippe Dollfus, Mireille Mouis, Patrice Hesto

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 612 KB

english, 1996

18

Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

P. Dollfus, C. Bru, S. Galdin, P. Hesto

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 270 KB

english, 1992

19

Operation of SiGe channel heterojunction p-MOSFET

Philippe Dollfus, François-Xavier Musalem, Sylvie Galdin, Patrice Hesto

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

20

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Hugues Cazin d'Honincthun, Sylvie Galdin-Retailleau, Arnaud Bournel, Philippe Dollfus, Jean-Philippe Bourgoin

Journal:

Comptes Rendus Physique

Year:

2008

Language:

english

File:

PDF, 1.28 MB

english, 2008

21

Electronic properties of semiconductor quantum dots for Coulomb blockade applications

J Sée, P Dollfus, S Galdin, P Hesto

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 283 KB

english, 2004

22

Influence of capacitive effects on the dynamic of a CNTFET by Monte Carlo method

H. Cazin d’Honincthun, H.-Nha Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 262 KB

english, 2008

23

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 513 KB

english, 2005

24

Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

A Bournel, P Dollfus, S Galdin, F.-X Musalem, P Hesto

Journal:

Solid State Communications

Year:

1997

Language:

english

File:

PDF, 485 KB

english, 1997

25

Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution

S. Barraud, P. Dollfus, S. Galdin, P. Hesto

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 247 KB

english, 2002

26

Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation

S. Galdin, M.-E. Arbey, P. Dollfus, P. Hesto

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 210 KB

english, 1999

27

Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation

Philippe Dollfus, Sylvie Galdin, Marie-Emma Arbey, Patrice Hesto

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 325 KB

1997

28

Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation

E Cassan, S Galdin, P Dollfus, P Hesto

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 157 KB

english, 1999

29

Effect of doping profile on the potential performance of buried channel SiGeC/Si heterostructure MOS devices

E Cassan, P Dollfus, S Galdin

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2002

Language:

english

File:

PDF, 174 KB

english, 2002

30

Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

K. Huet, C. Chassat, D.-P. Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 578 KB

english, 2008

31

3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices

P. Dollfus, J. E. VeláZquez, A. Bournel, S. Galdin-Retailleau

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 741 KB

english, 2004

32

Influence of Ballistic Effects in Ultra-Small MOSFETs

J. Saint Martin, V. Aubry-Fortuna, A. Bournel, P. Dollfus, S. Galdin, C. Chassat

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 478 KB

english, 2004

33

From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters

J. Sée, P. Dollfus, S. Galdin, P. Hesto

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 818 KB

english, 2006

34

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Damien Querlioz, Huu-Nha Nguyen, Jérôme Saint-Martin, Arnaud Bournel, Sylvie Galdin-Retailleau, Philippe Dollfus

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.60 MB

english, 2009

35

Multiscale simulation of carbon nanotube devices

C. Adessi, R. Avriller, X. Blase, A. Bournel, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T.

Journal:

Comptes Rendus Physique

Year:

2009

File:

PDF, 1.32 MB

2009

36

Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

J. Sée, P. Dollfus, S. Galdin-Retailleau, P. Hesto

Journal:

Journal of Computational Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

37

Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model

Valentin, Audrey, Sée, Johann, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Journal:

Journal of Physics Condensed Matter

Year:

2008

Language:

english

File:

PDF, 842 KB

english, 2008

38

Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance

Dollfus, P., Galdin, S., Hesto, P., Velazquez, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 132 KB

english, 2000

39

Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Dollfus, P., Bournel, A., Galdin, S., Barraud, S., Hesto, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

40

Theoretical investigation of negative differential conductance regime of silicon nanocrystal single-electron devices

See, J., Dollfus, P., Galdin, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 564 KB

english, 2006

41

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 889 KB

english, 2007

42

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Huu-Nha Nguyen, Querlioz, D., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 644 KB

english, 2011

43

Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Talbo, V., Galdin-Retailleau, S., Valentin, A., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.26 MB

english, 2011

44

Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (

E. Cassan, P. Dollfus, S. Galdin

Journal:

Journal of Non-Crystalline Solids

Year:

2001

Language:

english

File:

PDF, 248 KB

english, 2001

45

Band offset predictions for strained group IV alloys: Si 1- x - y Ge x C y on Si(001) and Si 1- x Ge x on Si 1- z Ge z (001)

Galdin, Sylvie, Dollfus, Philippe, Aubry-Fortuna, Valérie, Hesto, Patrice, Osten, H Jörg

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

46

Phonon effect on single-electron transport in two-dot semiconductor devices

Valentin, Audrey, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 785 KB

english, 2009

47

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Fully self-consistent simulation of silicon nanocrystal-based single-electron transistors

Talbo, Vincent, Valentin, Audrey, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Year:

2010

Language:

english

File:

PDF, 878 KB

english, 2010

48

First-order intervalley scattering in low-dimensional systems

Monsef, Florian, Dollfus, Philippe, Galdin, Sylvie, Bournel, Arnaud

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 70 KB

english, 2002

49

Erratum: First-order intervalley scattering in low-dimensional systems [Phys. Rev. B 65 , 212304 (2002)]

Monsef, Florian, Dollfus, Philippe, Galdin, Sylvie, Bournel, Arnaud

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 41 KB

english, 2003

50

tight-binding and an effective-mass description of silicon quantum dots

Sée, Johann, Dollfus, Philippe, Galdin, Sylvie

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 206 KB

english, 2002